Chapter 8. Raman Spectra of Molecular SiS2 and GeS2 in Solid CH4

  1. Prof. Norbert Auner2 and
  2. Prof. Johann Weis3
  1. M. Friesen and
  2. H. Schnöckel

Published Online: 28 APR 2008

DOI: 10.1002/9783527619917.ch8

Organosilicon Chemistry IV: From Molecules to Materials

Organosilicon Chemistry IV: From Molecules to Materials

How to Cite

Friesen, M. and Schnöckel, H. (2000) Raman Spectra of Molecular SiS2 and GeS2 in Solid CH4, in Organosilicon Chemistry IV: From Molecules to Materials (eds N. Auner and J. Weis), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527619917.ch8

Editor Information

  1. 2

    Inst. für Anorganische Chemie, der Universität Frankfurt, Marie-Curie-Strasse 11, D-60439 Frankfurt am Main, Germany, Phone: 0 69/7 98-29180, -29591, Fax: 069/798-29188

  2. 3

    Wacker-Chemie GmbH, Geschäftsbereich S, Werk Burghausen, Johannes-Hess-Strasse 24, D-84489 Burghausen, Germany

Author Information

  1. Institut für Anorganische Chemie der Universität Karlsruhe Engesserstr. Geb 30.45, 76128 Karlsruhe, Germany Tel: Int code + (721)608 2981 — Fax: Int code + (721)608 4854

Publication History

  1. Published Online: 28 APR 2008
  2. Published Print: 17 JAN 2000

ISBN Information

Print ISBN: 9783527298549

Online ISBN: 9783527619917

SEARCH

Keywords:

  • matrix-isolation;
  • silicon disulfide;
  • germanium disulfide;
  • raman spectra

Summary

Molecular SiS2 and GeS2 are generated under matrix conditions in solid CH4 after the reaction of SiS or GeS, respectively, with S atoms formed by photolysis of COS. Raman spectra exhibit the symmetric stretching vibrations from which the force constants f(SiS) and f(GeS) can be obtained. The experimental data are in line with results from ab initio calculations.