Chapter 10. Compound Semiconductor Device Processing

  1. Prof. Kenneth A. Jackson2 and
  2. Prof. Dr. Wolfgang Schröter3
  1. John M. Parsey Jr.

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621828.ch10

Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2

Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2

How to Cite

Parsey, J. M. (2000) Compound Semiconductor Device Processing, in Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621828.ch10

Editor Information

  1. 2

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 3

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. Motorola, Semiconductor Products Sector, III-V Device Development Laboratory, Tempe, AZ, U.S.A.

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298358

Online ISBN: 9783527621828

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Keywords:

  • vapor pressures;
  • mitigate electromigration;
  • electrical junctions;
  • dielectric deposition;
  • thermodynamic

Summary

The chapter contains sections titled:

  • Introduction

  • Doping Processes

  • Isolation Methods

  • Diffusion

  • Etching Techniques

  • Ohmic Contacts

  • Schottky Barriers and Gates

  • Annealing

  • Dielectrics and Interlayer Isolation

  • Resistors

  • Metallization and Liftoff Processes

  • Backside Processing and Die Separation

  • References