Chapter 9. Silicon Device Processing

  1. Prof. Kenneth A. Jackson2 and
  2. Prof. Dr. Wolfgang Schröter3
  1. Dim-Lee Kwong

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621828.ch9

Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2

Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2

How to Cite

Kwong, D.-L. (2000) Silicon Device Processing, in Handbook of Semiconductor Technology: Processing of Semiconductors, Volume 2 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621828.ch9

Editor Information

  1. 2

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 3

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, U.S.A.

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298358

Online ISBN: 9783527621828

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Keywords:

  • fabrication techniques;
  • extended crystalline;
  • generation velocity;
  • polysilicon;
  • silicon interstitials

Summary

The chapter contains sections titled:

  • Introduction

  • Gettering

  • Device Isolation

  • Gate Dielectrics

  • Shallow Junction Formation

  • Metallization

  • Cluster Tool Technology

  • References