Chapter 10. High-Temperature Properties of Transition Elements in Silicon

  1. Prof. Kenneth A. Jackson3 and
  2. Prof. Dr. Wolfgang Schröter4
  1. Wolfgang Schröter1,
  2. Michael Seibt1 and
  3. Dieter Gilles2

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621842.ch10

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

How to Cite

Schröter, W., Seibt, M. and Gilles, D. (2000) High-Temperature Properties of Transition Elements in Silicon, in Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621842.ch10

Editor Information

  1. 3

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 4

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. 1

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Germany

  2. 2

    Wacker Siltronic AG, Burghausen, Germany

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298341

Online ISBN: 9783527621842

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Keywords:

  • transition elements;
  • intensive research activities;
  • metallic atoms;
  • compilations of diffusion data;
  • extrinsic silicon

Summary

The chapter contains sections titles:

  • Introduction

  • Transition Elements in Intrinsic Silicon

  • Solubility and Diffusion in Extrinsic Silicon

  • Precipitation of Transition Elements in Silicon

  • Gettering Techniques and Mechanisms

  • Summary and Outlook

  • References