Chapter 11. Fundamental Aspects of SiC

  1. Prof. Kenneth A. Jackson2 and
  2. Prof. Dr. Wolfgang Schröter3
  1. Wolfgang J. Choyke and
  2. Robert P. Devaty

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621842.ch11

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

How to Cite

Choyke, W. J. and Devaty, R. P. (2000) Fundamental Aspects of SiC, in Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621842.ch11

Editor Information

  1. 2

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 3

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, U.S.A.

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298341

Online ISBN: 9783527621842

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Keywords:

  • solar system;
  • asymptotic giant branch;
  • crystallography;
  • valence band edges;
  • brillouin zone

Summary

The chapter contains sections titles:

  • Introduction

  • Polytypism

  • Band Structure

  • Phonons

  • Intrinsic Excitons

  • Shallow Centers

  • Deep Centers

  • Transport Properties

  • Acknowledgement

  • References