Chapter 3. Intrinsic Point Defects in Semiconductors 1999

  1. Prof. Kenneth A. Jackson2 and
  2. Prof. Dr. Wolfgang Schröter3
  1. George D. Watkins

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621842.ch3

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

How to Cite

Watkins, G. D. (2000) Intrinsic Point Defects in Semiconductors 1999, in Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621842.ch3

Editor Information

  1. 2

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 3

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. Department of Physics, Lehigh University, Bethlehem, U.S.A.

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298341

Online ISBN: 9783527621842

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Keywords:

  • intrinsic point defects;
  • semiconductors;
  • lattice vacancy;
  • binding energy;
  • thermodynamic equilibrium

Summary

The chapter contains sections titles:

  • Introduction

  • Silicon

  • Other Group IV Semiconductors

  • II - VI Semiconductors

  • III-V Semiconductors

  • Summary and Overview

  • Acknowledgements

  • References