Chapter 4. Deep Centers in Semiconductors

  1. Prof. Kenneth A. Jackson2 and
  2. Prof. Dr. Wolfgang Schröter3
  1. Helmut Feichtinger

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621842.ch4

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

How to Cite

Feichtinger, H. (2000) Deep Centers in Semiconductors, in Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621842.ch4

Editor Information

  1. 2

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 3

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. Institut für Experimentalphysik der Karl-Franzens-Universität, Graz, Austria

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298341

Online ISBN: 9783527621842

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Keywords:

  • deep centers;
  • semiconductors;
  • shallow donors or acceptors;
  • ionization energies;
  • effective mass theory

Summary

The chapter contains sections titles:

  • Introduction

  • Deep Centers: Electronic Transitions and Concepts

  • Phenomenological Models and Electronic Structure

  • Properties of Selected Systems

  • Appendix: Ionization Energies and Level Positions of Isolated Transition Metal Impurities in Silicon

  • References