Chapter 6. Dislocations

  1. Prof. Kenneth A. Jackson3 and
  2. Prof. Dr. Wolfgang Schröter4
  1. Helmut Alexander1 and
  2. Helmar Teichler2

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621842.ch6

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

How to Cite

Alexander, H. and Teichler, H. (2000) Dislocations, in Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621842.ch6

Editor Information

  1. 3

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 4

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. 1

    II. Physikalisches Institut der Universität Köln, Köln, Federal Republic of Germany

  2. 2

    Institut für Materialphysik der Universität Göttingen, Göttingen, Federal Republic of Germany

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298341

Online ISBN: 9783527621842

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Keywords:

  • photoluminescence;
  • optical absorption;
  • microwave conductivity;
  • electric dipole spin resonance;
  • electron beam induced current

Summary

The chapter contains sections titles:

  • Introduction

  • Geometry

  • Experimental Results on the Electronic Properties of Dislocations and Deformation-Induced Point Defects

  • Theoretical Investigations about Electronic Levels of Dislocations

  • Dislocation Motion

  • Theory of Dislocation Motion

  • Dislocation Generation and Plastic Deformation

  • Acknowledgement

  • References