Chapter 7. Grain Boundaries in Semiconductors

  1. Prof. Kenneth A. Jackson2 and
  2. Prof. Dr. Wolfgang Schröter3
  1. Jany Thibault,
  2. Jean-Luc Rouviere and
  3. Alain Bourret

Published Online: 28 MAY 2008

DOI: 10.1002/9783527621842.ch7

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1

How to Cite

Thibault, J., Rouviere, J.-L. and Bourret, A. (2000) Grain Boundaries in Semiconductors, in Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 (eds K. A. Jackson and W. Schröter), Wiley-VCH Verlag GmbH, Weinheim, Germany. doi: 10.1002/9783527621842.ch7

Editor Information

  1. 2

    The University of Arizona, Arizona Materials Laboratory, 4715 E. Fort Lowell Road, Tucson, AZ 85712, USA

  2. 3

    IV. Physikalisches Institut der Georg-August-Universität Göttingen, Bunsenstraße 13–15, D-37073 Göttingen, Germany

Author Information

  1. CEA-Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, 17 rue des Martyrs, Grenoble, France

Publication History

  1. Published Online: 28 MAY 2008
  2. Published Print: 27 JUN 2000

ISBN Information

Print ISBN: 9783527298341

Online ISBN: 9783527621842

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Keywords:

  • grain boundaries;
  • semiconductors;
  • natural crystalline materials;
  • electrical conductivity;
  • high resolution electron microscopy

Summary

The chapter contains sections titles:

  • Introduction

  • Grain Boundary Structure: Concepts and Tools

  • Grain Boundary Structure: Experience and Simulation Results

  • Electrical Properties of Grain Boundaries

  • Impurity Segregation and Precipitation Induced by Grain Boundaries

  • Mechanical Properties of Grain Boundaries in Semiconductors

  • Conclusions

  • References