Chapter 12. Growth Control of Clusters in Reactive Plasmas and Application to High-Stability a-Si:H Film Deposition

  1. Prof. Riccardo d'Agostino3,
  2. Prof. Pietro Favia3,
  3. Prof. Yoshinobu Kawai4,
  4. Prof. Hideo Ikegami5,
  5. Prof. Noriyoshi Sato6 and
  6. Prof. Farzaneh Arefi-Khonsari7
  1. Y. Watanabe1,
  2. M. Shiratani2 and
  3. K. Koga2

Published Online: 8 APR 2008

DOI: 10.1002/9783527622184.ch12

Advanced Plasma Technology

Advanced Plasma Technology

How to Cite

Watanabe, Y., Shiratani, M. and Koga, K. (2007) Growth Control of Clusters in Reactive Plasmas and Application to High-Stability a-Si:H Film Deposition, in Advanced Plasma Technology (eds R. d'Agostino, P. Favia, Y. Kawai, H. Ikegami, N. Sato and F. Arefi-Khonsari), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527622184.ch12

Editor Information

  1. 3

    Department of Chemistry, University of Bari, Via Orabona 4, 70126 Bari, Italy

  2. 4

    Research Institute for Applied Mechanics, Kyushu University, Engineering Sciences, Kasugakoen 6-1, Kasuga, Fukuoka 816-8580, Japan

  3. 5

    National Institute for Fusion Science, Toki, Gifu 509-5292, Japan

  4. 6

    Graduate School of Engineering, Tohoku University, Kadan 4-17-113, Sendai 980-0815, Japan

  5. 7

    Laboratoire de Génie des Procédés, Plasma et Traitements de Surface, Université Pierre et Marie Curie, ENSCP, 11 rue Pierre et Marie Curie, 75231 Paris cedex 05, France

Author Information

  1. 1

    Kyushu University (Professor Emeritus), Iki-Danchi, Fukuoka 819-0042, Japan

  2. 2

    Graduate School of Information Science & Electrical Engineering, Kyushu University, Fukuoka 812-8581, Japan

Publication History

  1. Published Online: 8 APR 2008
  2. Published Print: 12 DEC 2007

ISBN Information

Print ISBN: 9783527405916

Online ISBN: 9783527622184

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Keywords:

  • clusters;
  • growth control;
  • reactive plasmas;
  • film deposition

Summary

This chapter contains sections titled:

  • Introduction

  • Review of Cluster Growth Observation in SiH4 HFCCP

    • Precursor for Cluster Growth Initiation

    • Cluster Nucleation Phase

    • Effects of Gas Flow on Cluster Growth

    • Effects of Gas Temperature Gradient on Cluster Growth

    • Effects of H2 Dilution on Cluster Growth

    • Effects of Discharge Modulation on Cluster Growth

  • Cluster Growth Kinetics in SiH4 HFCCP

  • Growth Control of Clusters

    • Control of Production Rate of Precursor Radicals

    • Control of Growth Reactions and Transport Loss of Clusters

  • Application of Cluster Growth Control to High-Stability a-Si:H Film Deposition

  • Conclusions