Chapter 3. Nonpolar GaN Quasi-Wafers Sliced from Bulk GaN Crystals Grown by High-Pressure Solution and HVPE Methods

  1. Dr. Tanya Paskova
  1. Izabella Grzegory,
  2. Henryk Teisseyre,
  3. Bolesław Łucznik,
  4. B. Pastuszka,
  5. Michał Boćkowski and
  6. Sylwester Porowski

Published Online: 16 SEP 2008

DOI: 10.1002/9783527623150.ch3

Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices

How to Cite

Grzegory, I., Teisseyre, H., Łucznik, B., Pastuszka, B., Boćkowski, M. and Porowski, S. (2008) Nonpolar GaN Quasi-Wafers Sliced from Bulk GaN Crystals Grown by High-Pressure Solution and HVPE Methods, in Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices (ed T. Paskova), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623150.ch3

Editor Information

  1. Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC 27617, USA

Author Information

  1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

Publication History

  1. Published Online: 16 SEP 2008
  2. Published Print: 20 FEB 2008

ISBN Information

Print ISBN: 9783527407682

Online ISBN: 9783527623150

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