Chapter 3. Thermodynamics, Origin, and Control of Defects

  1. Dr.-Ing. Hans J. Scheel2 and
  2. Dr. Peter Capper3
  1. Peter Rudolph

Published Online: 25 NOV 2008

DOI: 10.1002/9783527623440.ch3

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

How to Cite

Rudolph, P. (2008) Thermodynamics, Origin, and Control of Defects, in Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production (eds H. J. Scheel and P. Capper), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623440.ch3

Editor Information

  1. 2

    Scheel Consulting, Grönstrasse Haus Anatas, 3803 Beatenberg, Switzerland

  2. 3

    SELEX Sensors and Airborne, Systems Infrared Ltd., P.O. Box 217, Millbrook, Southampton SO1 5EG, United Kingdom

Author Information

  1. Institute for Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany

Publication History

  1. Published Online: 25 NOV 2008
  2. Published Print: 16 JAN 2008

ISBN Information

Print ISBN: 9783527317622

Online ISBN: 9783527623440

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Keywords:

  • point defects;
  • stoichiometry;
  • dislocations;
  • cell structure;
  • precipitates;
  • inclusions;
  • GaAs;
  • CdTe

Summary

This chapter contains sections titled:

  • Introduction

  • Native Point Defects

  • Dislocations

  • Dislocation Cells and Grain Boundaries

  • Second-Phase Particles

  • Summary and Outlook

  • References