Chapter 4. Thermophysical Properties of Molten Silicon

  1. Dr.-Ing. Hans J. Scheel5 and
  2. Dr. Peter Capper6
  1. Taketoshi Hibiya1,
  2. Hiroyuki Fukuyama2,
  3. Takao Tsukada3 and
  4. Masahito Watanabe4

Published Online: 25 NOV 2008

DOI: 10.1002/9783527623440.ch4

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

How to Cite

Hibiya, T., Fukuyama, H., Tsukada, T. and Watanabe, M. (2008) Thermophysical Properties of Molten Silicon, in Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production (eds H. J. Scheel and P. Capper), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623440.ch4

Editor Information

  1. 5

    Scheel Consulting, Grönstrasse Haus Anatas, 3803 Beatenberg, Switzerland

  2. 6

    SELEX Sensors and Airborne, Systems Infrared Ltd., P.O. Box 217, Millbrook, Southampton SO1 5EG, United Kingdom

Author Information

  1. 1

    Graduate School of System Design and Management, Keio University, 2-15-45, Mita, Minato-ku, Tokyo 108-8345, Japan

  2. 2

    Institute of Multidisciplinary, Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

  3. 3

    Department of Chemical Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan

  4. 4

    Department of Physics, Gakushuin University, 1-5-1 Mejiro, Tokyo 171-8588, Japan

Publication History

  1. Published Online: 25 NOV 2008
  2. Published Print: 16 JAN 2008

ISBN Information

Print ISBN: 9783527317622

Online ISBN: 9783527623440

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