Chapter 5. Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling

  1. Dr.-Ing. Hans J. Scheel2 and
  2. Dr. Peter Capper3
  1. Jochen Friedrich

Published Online: 25 NOV 2008

DOI: 10.1002/9783527623440.ch5

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

How to Cite

Friedrich, J. (2008) Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling, in Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production (eds H. J. Scheel and P. Capper), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623440.ch5

Editor Information

  1. 2

    Scheel Consulting, Grönstrasse Haus Anatas, 3803 Beatenberg, Switzerland

  2. 3

    SELEX Sensors and Airborne, Systems Infrared Ltd., P.O. Box 217, Millbrook, Southampton SO1 5EG, United Kingdom

Author Information

  1. Fraunhofer IISB, Crystal Growth Laboratory, Schottkystr. 10, 91058 Erlangen, Germany

Publication History

  1. Published Online: 25 NOV 2008
  2. Published Print: 16 JAN 2008

ISBN Information

Print ISBN: 9783527317622

Online ISBN: 9783527623440

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Keywords:

  • Bridgman;
  • vertical gradient freeze;
  • modeling;
  • defects;
  • semiconductors;
  • oxides;
  • fluorides

Summary

This chapter contains sections titled:

  • Introduction

  • Principles of Thermal Modeling

  • Verification of Numerical Models

  • Yield Enhancement by Defect Control

  • Conclusions

  • Acknowledgements

  • References