Chapter 6. Modeling of Czochralski Growth of Large Silicon Crystals

  1. Dr.-Ing. Hans J. Scheel4 and
  2. Dr. Peter Capper5
  1. Vladimir Kalaev1,
  2. Yuri Makarov2 and
  3. Alexander Zhmakin3

Published Online: 25 NOV 2008

DOI: 10.1002/9783527623440.ch6

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

How to Cite

Kalaev, V., Makarov, Y. and Zhmakin, A. (2008) Modeling of Czochralski Growth of Large Silicon Crystals, in Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production (eds H. J. Scheel and P. Capper), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623440.ch6

Editor Information

  1. 4

    Scheel Consulting, Grönstrasse Haus Anatas, 3803 Beatenberg, Switzerland

  2. 5

    SELEX Sensors and Airborne, Systems Infrared Ltd., P.O. Box 217, Millbrook, Southampton SO1 5EG, United Kingdom

Author Information

  1. 1

    Soft-Impact Ltd., P.O. Box 83, St.-Petersburg 194156, Russia

  2. 2

    Semiconductor Technology Res. Inc., 10404 Patterson Ave., Suite 108, Richmond, VA 23238, USA

  3. 3

    Ioffe Physical Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, St.-Petersburg 194021, Russia

Publication History

  1. Published Online: 25 NOV 2008
  2. Published Print: 16 JAN 2008

ISBN Information

Print ISBN: 9783527317622

Online ISBN: 9783527623440

SEARCH

Keywords:

  • modeling;
  • Czochralski;
  • crystal growth;
  • heat transfer;
  • turbulent melt flow

Summary

This chapter contains sections titled:

  • Introduction

  • Numerical Model

  • Model Validation

  • Conclusions

  • Acknowledgments

  • References