Chapter 7. Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth

  1. Dr.-Ing. Hans J. Scheel2 and
  2. Dr. Peter Capper3
  1. Koichi Kakimoto and
  2. Lijun Liu

Published Online: 25 NOV 2008

DOI: 10.1002/9783527623440.ch7

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

How to Cite

Kakimoto, K. and Liu, L. (2008) Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal Growth, in Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production (eds H. J. Scheel and P. Capper), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623440.ch7

Editor Information

  1. 2

    Scheel Consulting, Grönstrasse Haus Anatas, 3803 Beatenberg, Switzerland

  2. 3

    SELEX Sensors and Airborne, Systems Infrared Ltd., P.O. Box 217, Millbrook, Southampton SO1 5EG, United Kingdom

Author Information

  1. Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan

Publication History

  1. Published Online: 25 NOV 2008
  2. Published Print: 16 JAN 2008

ISBN Information

Print ISBN: 9783527317622

Online ISBN: 9783527623440

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Keywords:

  • Czochralski;
  • magnetic fields;
  • interface

Summary

This chapter contains sections titled:

  • Introduction

  • Model Description and Governing Equations Under a Transverse Magnetic Field

  • Computation Results for Model Validation

  • Numerical Analysis of a TMCZ Growth

  • Conclusions

  • Acknowledgements

  • References