Chapter 9. Recent Progress in GaAs Growth Technologies at FREIBERGER

  1. Dr.-Ing. Hans J. Scheel4 and
  2. Dr. Peter Capper5
  1. Stefan Eichler1,
  2. Frank Börner1,
  3. Thomas Bünger2,
  4. Manfred Jurisch1,
  5. Andreas Köhler1,
  6. Ullrich Kretzer1,
  7. Max Scheffer-Czygan1,
  8. Berndt Weinert1 and
  9. Tilo Flade3

Published Online: 25 NOV 2008

DOI: 10.1002/9783527623440.ch9

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production

How to Cite

Eichler, S., Börner, F., Bünger, T., Jurisch, M., Köhler, A., Kretzer, U., Scheffer-Czygan, M., Weinert, B. and Flade, T. (2008) Recent Progress in GaAs Growth Technologies at FREIBERGER, in Crystal Growth Technology: From Fundamentals and Simulation to Large-scale Production (eds H. J. Scheel and P. Capper), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527623440.ch9

Editor Information

  1. 4

    Scheel Consulting, Grönstrasse Haus Anatas, 3803 Beatenberg, Switzerland

  2. 5

    SELEX Sensors and Airborne, Systems Infrared Ltd., P.O. Box 217, Millbrook, Southampton SO1 5EG, United Kingdom

Author Information

  1. 1

    Freiberger Compound Materials, GmbH, Am Junger Löwe Schacht 5, 09599 Freiberg, Germany

  2. 2

    Norddeutsche Raffinerie AG, Hovestrasse 50, 20539 Hamburg, Germany

  3. 3

    FCM GmbH, Am Junger Löwe Schacht 5, 09599 Freiberg, Germany

Publication History

  1. Published Online: 25 NOV 2008
  2. Published Print: 16 JAN 2008

ISBN Information

Print ISBN: 9783527317622

Online ISBN: 9783527623440

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Keywords:

  • crystal growth;
  • GaAs;
  • semi-conducting;
  • semi-insulating;
  • doping;
  • properties

Summary

This chapter contains sections titled:

  • Introduction

  • Properties of GaAs

  • Growth of Large-Diameter GaAs Single Crystals

  • LEC versus VB/VGF GaAs Wafers

  • Doping

  • Summary

  • Acknowledgements

  • References