7. Electric Field Domains in Bulk Semiconductors II: Trap-Mediated Instabilities

  1. Luis L. Bonilla1 and
  2. Stephen W. Teitsworth2

Published Online: 20 SEP 2010

DOI: 10.1002/9783527628674.ch7

Nonlinear Wave Methods for Charge Transport

Nonlinear Wave Methods for Charge Transport

How to Cite

Bonilla, L. L. and Teitsworth, S. W. (2010) Electric Field Domains in Bulk Semiconductors II: Trap-Mediated Instabilities, in Nonlinear Wave Methods for Charge Transport, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527628674.ch7

Author Information

  1. 1

    Gregorio Millan, Institute of Fluid Dynamics, Nanoscience and Industrial Mathematics, Universidad Carlos III de Madrid, Leganes, Spain

  2. 2

    Department of Physics, Duke University, Durham, USA

Publication History

  1. Published Online: 20 SEP 2010
  2. Published Print: 13 JAN 2010

ISBN Information

Print ISBN: 9783527406951

Online ISBN: 9783527628674

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Keywords:

  • Negative differential charge carrier concentration;
  • Trap-controlled instabilities;
  • Extrinsic semiconductors;
  • Impurity breakdown;
  • Voltage bias;
  • Gunn effect;
  • Wavefront shedding;
  • Impact ionization

Summary

This chapter contains sections titled:

  • Introduction

  • Drift-Diffusion Transport Model for Trap-Mediated System

  • Nondimensional Form and the Reduced Model

  • Steady States, JE Curves, and Steady Wave Solutions on the Infinite Line under Current Bias

  • Nonlinear Wave Solutions in Finite Samples under Voltage Bias

  • Multiple Shedding of Wavefronts in Extrinsic Material

  • References