1. Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

  1. Dr. Peter Friedrichs4,
  2. Prof. Dr. Tsunenobu Kimoto5,6,
  3. Prof. Dr. Lothar Ley7 and
  4. Dr. Gerhard Pensl8
  1. Sakwe Aloysius Sakwe1,
  2. Mathias Stockmeier2,
  3. Philip Hens1,
  4. Ralf Müller1,
  5. Desirée Queren1,
  6. Ulrike Kunecke1,
  7. Katja Konias2,
  8. Rainer Hock2,
  9. Andreas Magerl2,
  10. Michel Pons3,
  11. Albrecht Winnacker1 and
  12. Peter Wellmann1

Published Online: 28 MAR 2011

DOI: 10.1002/9783527629053.ch1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

How to Cite

Sakwe, S. A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Kunecke, U., Konias, K., Hock, R., Magerl, A., Pons, M., Winnacker, A. and Wellmann, P. (2009) Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution, in Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1 (eds P. Friedrichs, T. Kimoto, L. Ley and G. Pensl), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527629053.ch1

Editor Information

  1. 4

    SiCED GmbH& Co. KG, Erlangen, Germany

  2. 5

    Kyoto University, Electronic Science and Engineering, A1-301, Katsura, Nishikyo, Kyoto 615-8501, Japan

  3. 6

    Kyoto University, Photonics and Electronics Science and Engineering Center, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan

  4. 7

    Universität Erlangen–Nürnberg, Lehrstuhl für Technische Physik, Institut für Physik der Kondensierten Materie, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany

  5. 8

    Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany

Author Information

  1. 1

    University of Erlangen–Nürnberg, Institute for Materials Science VI, Materials for Electronics and Energy Technology, Martensstraße 7, 91058 Erlangen, Germany

  2. 2

    Universität Erlangen–Nürnberg, Institut für Physik der Kondensierten Materie, Lehrstuhl für Kristallographie und Strukturphysik, Staudtstraße 3, 91058 Erlangen, Germany

  3. 3

    Institut Nationale Polytechnique Grénoble (INPG), BP 75, 38402 Saint Marten D'Hères, Grénoble, France

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 21 OCT 2009

ISBN Information

Print ISBN: 9783527409532

Online ISBN: 9783527629053

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Keywords:

  • growth of SiC (silicon carbide);
  • SiC vapor growth;
  • spatial distribution of dislocations in SiC

Summary

This chapter contains sections titled:

  • Introduction

  • Experiments

  • Results and discussions

  • Spatial distribution of dislocations in SiC

  • Conclusions

  • References