13. Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation

  1. Dr. Peter Friedrichs2,
  2. Prof. Dr. Tsunenobu Kimoto3,4,
  3. Prof. Dr. Lothar Ley5 and
  4. Dr. Gerhard Pensl6
  1. Tetsuo Hatakeyama

Published Online: 28 MAR 2011

DOI: 10.1002/9783527629053.ch13

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

How to Cite

Hatakeyama, T. (2009) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation, in Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1 (eds P. Friedrichs, T. Kimoto, L. Ley and G. Pensl), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527629053.ch13

Editor Information

  1. 2

    SiCED GmbH& Co. KG, Erlangen, Germany

  2. 3

    Kyoto University, Electronic Science and Engineering, A1-301, Katsura, Nishikyo, Kyoto 615-8501, Japan

  3. 4

    Kyoto University, Photonics and Electronics Science and Engineering Center, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan

  4. 5

    Universität Erlangen–Nürnberg, Lehrstuhl für Technische Physik, Institut für Physik der Kondensierten Materie, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany

  5. 6

    Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany

Author Information

  1. Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 21 OCT 2009

ISBN Information

Print ISBN: 9783527409532

Online ISBN: 9783527629053

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Keywords:

  • impact ionization coefficients;
  • electrons;
  • holes;
  • 4H-SiC;
  • application to device simulation;
  • App A: Interpolation formula for anisotropic impact ionization coefficients;
  • App B: Scaling properties in the design of power devices

Summary

This chapter contains sections titled:

  • Introduction

  • Experiments

  • Modeling of anisotropic impact ionization coefficients

  • Application to device simulation of power devices

  • Summary and conclusions

  • Appendix A: Interpolation formula for anisotropic impact ionization coefficients

  • Appendix B: Scaling properties in the design of power devices

  • References