14. Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors

  1. Dr. Peter Friedrichs4,
  2. Prof. Dr. Tsunenobu Kimoto5,6,
  3. Prof. Dr. Lothar Ley7 and
  4. Dr. Gerhard Pensl8
  1. M. Krieger8,
  2. S. Beljakowa8,
  3. L. Trapaidze8,
  4. T. Frank1,
  5. H. B. Weber8,
  6. Dr. G. Pensl8,
  7. N. Hatta2,
  8. M. Abe2,
  9. H. Nagasawa2 and
  10. A. Schöner3

Published Online: 28 MAR 2011

DOI: 10.1002/9783527629053.ch14

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

How to Cite

Krieger, M., Beljakowa, S., Trapaidze, L., Frank, T., Weber, H. B., Pensl, G., Hatta, N., Abe, M., Nagasawa, H. and Schöner, A. (2009) Analysis of Interface Trap Parameters from Double-Peak Conductance Spectra Taken on N-Implanted 3C-SiC MOS Capacitors, in Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1 (eds P. Friedrichs, T. Kimoto, L. Ley and G. Pensl), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527629053.ch14

Editor Information

  1. 4

    SiCED GmbH& Co. KG, Erlangen, Germany

  2. 5

    Kyoto University, Electronic Science and Engineering, A1-301, Katsura, Nishikyo, Kyoto 615-8501, Japan

  3. 6

    Kyoto University, Photonics and Electronics Science and Engineering Center, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan

  4. 7

    Universität Erlangen–Nürnberg, Lehrstuhl für Technische Physik, Institut für Physik der Kondensierten Materie, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany

  5. 8

    Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany

Author Information

  1. 1

    Bunsenstraße 56, 91058 Erlangen, Germany

  2. 2

    SiC Development Center, Hoya Corporation, 1-17-16, Tanashioda, Sagamihara, Kanagawa 229-1125, Japan

  3. 3

    ACREO AB, Electrum 236, Isafjordsgatan 22, 164 40 Kista, Sweden

  4. 8

    Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 21 OCT 2009

ISBN Information

Print ISBN: 9783527409532

Online ISBN: 9783527629053

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Keywords:

  • interface trap parameters;
  • double-peak conductance spectra;
  • N-implanted 3C-SiC MOS capacitors;
  • model

Summary

This chapter contains sections titled:

  • Introduction

  • Experimental

  • Experimental results

  • Model

  • Discussion

  • Summary

  • References