15. Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems
- Dr. Peter Friedrichs2,
- Prof. Dr. Tsunenobu Kimoto3,4,
- Prof. Dr. Lothar Ley5,
- Dr. Gerhard Pensl6
Published Online: 28 MAR 2011
DOI: 10.1002/9783527629053.ch15
Copyright © 2010 Wiley-VCH Verlag GmbH & Co. KGaA
Book Title

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1
Additional Information
How to Cite
Starke, U. (2009) Non-Basal Plane SiC Surfaces: Anisotropic Structures and Low-Dimensional Electron Systems, in Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1 (eds P. Friedrichs, T. Kimoto, L. Ley and G. Pensl), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527629053.ch15
Editor Information
- 2
SiCED GmbH& Co. KG, Erlangen, Germany
- 3
Kyoto University, Electronic Science and Engineering, A1-301, Katsura, Nishikyo, Kyoto 615-8501, Japan
- 4
Kyoto University, Photonics and Electronics Science and Engineering Center, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
- 5
Universität Erlangen–Nürnberg, Lehrstuhl für Technische Physik, Institut für Physik der Kondensierten Materie, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany
- 6
Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany
Publication History
- Published Online: 28 MAR 2011
- Published Print: 21 OCT 2009
ISBN Information
Print ISBN: 9783527409532
Online ISBN: 9783527629053
- Summary
- Chapter
- References
Keywords:
- non-basal plane SiC surfaces;
- anisotropic structures;
- low-dimensional electron systems;
- crystal structure;
- surface termination;
- hydrogen etching
Summary
This chapter contains sections titled:
Introduction
Crystal structure and bulk truncated surface termination
Experimental procedures
Hydrogen etching
a-plane and m-plane surfaces
Surface phases on SiC (1 102)
The SiC(1102) surface
Summary
References
