4. Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects
- Dr. Peter Friedrichs2,
- Prof. Dr. Tsunenobu Kimoto3,4,
- Prof. Dr. Lothar Ley5 and
- Dr. Gerhard Pensl6
Published Online: 28 MAR 2011
Copyright © 2010 Wiley-VCH Verlag GmbH & Co. KGaA
Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1
How to Cite
Nagasawa, H., Abe, M., Yagi, K., Kawahara, T. and Hatta, N. (2009) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects, in Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1 (eds P. Friedrichs, T. Kimoto, L. Ley and G. Pensl), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527629053.ch4
SiCED GmbH& Co. KG, Erlangen, Germany
Kyoto University, Electronic Science and Engineering, A1-301, Katsura, Nishikyo, Kyoto 615-8501, Japan
Kyoto University, Photonics and Electronics Science and Engineering Center, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
Universität Erlangen–Nürnberg, Lehrstuhl für Technische Physik, Institut für Physik der Kondensierten Materie, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany
Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany
- Published Online: 28 MAR 2011
- Published Print: 21 OCT 2009
Print ISBN: 9783527409532
Online ISBN: 9783527629053
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