7. Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide

  1. Dr. Peter Friedrichs4,
  2. Prof. Dr. Tsunenobu Kimoto5,6,
  3. Prof. Dr. Lothar Ley7 and
  4. Dr. Gerhard Pensl8
  1. Martin Rambach1,
  2. Anton J. Bauer2 and
  3. Heiner Ryssel1,3

Published Online: 28 MAR 2011

DOI: 10.1002/9783527629053.ch7

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1

How to Cite

Rambach, M., Bauer, A. J. and Ryssel, H. (2009) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide, in Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1 (eds P. Friedrichs, T. Kimoto, L. Ley and G. Pensl), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527629053.ch7

Editor Information

  1. 4

    SiCED GmbH& Co. KG, Erlangen, Germany

  2. 5

    Kyoto University, Electronic Science and Engineering, A1-301, Katsura, Nishikyo, Kyoto 615-8501, Japan

  3. 6

    Kyoto University, Photonics and Electronics Science and Engineering Center, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan

  4. 7

    Universität Erlangen–Nürnberg, Lehrstuhl für Technische Physik, Institut für Physik der Kondensierten Materie, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany

  5. 8

    Universität Erlangen–Nürnberg, Lehrstuhl für Angewandte Physik, Staudtstraße 7/A3, 91058 Erlangen, Germany

Author Information

  1. 1

    University of Erlangen–Nürnberg, Cauerstraße 6, 91058 Erlangen, Germany

  2. 2

    Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystraße 10, 91052 Erlangen, Germany

  3. 3

    Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystraße 10, 91058 Erlangen, Germany

Publication History

  1. Published Online: 28 MAR 2011
  2. Published Print: 21 OCT 2009

ISBN Information

Print ISBN: 9783527409532

Online ISBN: 9783527629053

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