Chapter 4. Long-Wavelength GaSb Disk Lasers

  1. Prof. Dr. Oleg G. Okhotnikov
  1. Benno Rösener1,
  2. Marcel Rattunde1,
  3. John-Mark Hopkins2,
  4. David Burns2 and
  5. Joachim Wagner1

Published Online: 16 JUL 2010

DOI: 10.1002/9783527630394.ch4

Semiconductor Disk Lasers: Physics and Technology

Semiconductor Disk Lasers: Physics and Technology

How to Cite

Rösener, B., Rattunde, M., Hopkins, J.-M., Burns, D. and Wagner, J. (2010) Long-Wavelength GaSb Disk Lasers, in Semiconductor Disk Lasers: Physics and Technology (ed O. G. Okhotnikov), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527630394.ch4

Editor Information

  1. Tampere University of Technology, Optoelectronics Research Centre, Korkeakoulunkatu 3, 33720 Tampere, Finland

Author Information

  1. 1

    Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany

  2. 2

    University of Strathclyde, Institute of Photonics, 106 Rottenrow, Glasgow G4 0NW, UK

Publication History

  1. Published Online: 16 JUL 2010
  2. Published Print: 19 APR 2010

ISBN Information

Print ISBN: 9783527409334

Online ISBN: 9783527630394

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Keywords:

  • mid-infrared;
  • Gallium antimonide;
  • wavelength tuning;
  • freqnency stubilization;
  • heat spreader;
  • molecular beam epitaxy;
  • photoluminescence;
  • resonant periodic gain;
  • semiconductor disk laser

Summary

This chapter contains sections titled:

  • Introduction

  • The III-Sb Material System

  • Epitaxial Layer Design and Growth of III-Sb Disk Laser Structures

  • High-Power 2.X µm Disk Lasers

  • Tunable, Single-Frequency Lasers

  • Disk Lasers At and Above 3 µm Wavelength

  • Conclusions

  • References