10. Interfacial Dipole Effects on High-k Gate Stacks

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Li Qiang Zhu

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch10

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Zhu, L. Q. (2012) Interfacial Dipole Effects on High-k Gate Stacks, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch10

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. Chinese Academy of Sciences, Ningbo Institute of Material Technology and Engineering, 519 Zhuangshi Road, Zhenhai, Ningbo 315201, China

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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Keywords:

  • gate dielectrics;
  • gate resistance;
  • high-k gate stacks;
  • interfacial dipole;
  • metal gate electrode;
  • work function

Summary

This chapter contains sections titled:

  • Introduction

  • Metal Gate Consideration

  • Interfacial Dipole Effects in High-k Gate Stacks

  • Observation of the Interfacial Dipole in High-k Stacks

  • Summary

  • References