11. Metal Gate Electrode for Advanced CMOS Application

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Wenwu Wang,
  2. Xiaolei Wang and
  3. Kai Han

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch11

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Wang, W., Wang, X. and Han, K. (2012) Metal Gate Electrode for Advanced CMOS Application, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch11

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. Chinese Academy of Sciences, Institute of Microelectronics, 3 # BeiTuCheng West Road, Chaoyang District, Beijing 100029, China

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

SEARCH

Keywords:

  • High-κ dielectric;
  • Metal gate electrode;
  • Work function

Summary

This chapter contains sections titled:

  • The Scaling and Improved Performance of MOSFET Devices

  • Urgent Issues about MOS Gate Materials for Sub-0.1 µm Device Gate Stack

  • New Requirements of MOS Gate Materials for Sub-0.1 µm Device Gate Stack

  • Summary

  • References