12. Metal Gate/High-k CMOS Evolution from Si to Ge Platform

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Albert Achin

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch12

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Achin, A. (2012) Metal Gate/High-k CMOS Evolution from Si to Ge Platform, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch12

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. National Chiao-Tung University, Electronics Engineering Department, and College of Photonics, 1001 University Road, Hsinchu 300, Taiwan

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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Keywords:

  • gate length;
  • Ge-on-insulator;
  • high κ;
  • metal gate;
  • MOSFETs;
  • source–drain leakage current

Summary

This chapter contains sections titled:

  • Introduction

  • High-k/Si CMOSFETs

  • High-k/Ge CMOSFETs

  • Ge Platform

  • Conclusions

  • References