15. High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Xubing Lu

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch15

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Lu, X. (2012) High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch15

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. South China Normal University, Higher Education Mega Center, Guangzhou, School of Physics and Telecommunication Engineering, Institute for Advanced Materials (IAM), Guangdong 510006, China

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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