16. Rare-Earth Oxides as High-k Gate Dielectrics for Advanced Device Architectures

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Pooi See Lee,
  2. Mei Yin Chan and
  3. Peter Damarwan

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch16

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Lee, P. S., Chan, M. Y. and Damarwan, P. (2012) Rare-Earth Oxides as High-k Gate Dielectrics for Advanced Device Architectures, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch16

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. Nanyang Technological University, School of Materials Science and Engineering, Block N4.1, 50 Nanyang Avenue, Singapore 639798, Singapore

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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Keywords:

  • device architecture;
  • dielectric constant;
  • Fermi level pinning;
  • permittivity;
  • rare-earth oxides;
  • thermal stability

Summary

This chapter contains sections titled:

  • Introduction

  • Key Challenges for High-k Dielectrics

  • Rare-Earth Oxides as High-k Dielectrics

  • High-k Dielectrics in Advanced Device Architecture

  • References