5. Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Fu-Chien Chiu1,
  2. Somnath Mondal2 and
  3. Tung-Ming Pan2

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch5

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Chiu, F.-C., Mondal, S. and Pan, T.-M. (2012) Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch5

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. 1

    Ming-Chuan University, Department of Electronic Engineering, Taoyuan 333, Taiwan

  2. 2

    Chang Gung University, Department of Electronic Engineering, Taoyuan 333, Taiwan

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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Keywords:

  • high permittivity dielectric (high-κ);
  • rare-earth oxide;
  • X-ray diffraction;
  • atomic force microscopy;
  • X-ray photoelectron spectroscopy;
  • transmission electron microscope

Summary

This chapter contains sections titled:

  • Introduction

  • Requirement of High-k Oxide Materials

  • Rare-Earth Oxide as Alternative Gate Dielectrics

  • Structural Characteristics of High-k RE Oxide Films

  • Electrical Characteristics of High-k RE Oxide Films

  • Conclusions and Perspectives

  • References