6. Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3) for High-k Gate Insulators

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Yi Zhao

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch6

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Zhao, Y. (2012) Hygroscopic Tolerance and Permittivity Enhancement of Lanthanum Oxide (La2O3) for High-k Gate Insulators, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch6

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. Nanjing University, School of Electronic Science and Engineering, Hankou Road 22, Nanjing 210093, China

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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Keywords:

  • gate insulator;
  • hygroscopic tolerance;
  • lanthanum oxide;
  • moisture absorption;
  • permimttivtiy;
  • rare-earth oxides

Summary

This chapter contains sections titled:

  • Introduction

  • Hygroscopic Phenomenon of La2O3 Films

  • Low Permittivity Phenomenon of La2O3 Films

  • Hygroscopic Tolerance Enhancement of La2O3 Films

  • Hygroscopic Tolerance Enhancement of La2O3 Films by Ultraviolet Ozone Treatment

  • Thermodynamic Analysis of Moisture Absorption Phenomenon in High-k Gate Dielectrics

  • Permittivity Enhancement of La2O3 Films by Phase Control

  • Summary

  • References