7. Characterization of High-k Dielectric Internal Structure by X-Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

  1. Prof. Gang He and
  2. Prof. Zhaoqi Sun
  1. Elena O. Filatova1,
  2. Andrey A. Sokolov1 and
  3. Igor V. Kozhevnikov2

Published Online: 23 AUG 2012

DOI: 10.1002/9783527646340.ch7

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology

How to Cite

Filatova, E. O., Sokolov, A. A. and Kozhevnikov, I. V. (2012) Characterization of High-k Dielectric Internal Structure by X-Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis, in High-k Gate Dielectrics for CMOS Technology (eds G. He and Z. Sun), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany. doi: 10.1002/9783527646340.ch7

Editor Information

  1. Anhui University, School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Feixi Road 3, Hefei 230039, China

Author Information

  1. 1

    Petersburg State University, St. Petersburg 198504, Russia

  2. 2

    Institute of Crystallography, Moscow 119333, Russia

Publication History

  1. Published Online: 23 AUG 2012
  2. Published Print: 22 AUG 2012

ISBN Information

Print ISBN: 9783527330324

Online ISBN: 9783527646340

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