This work was supported by the German Research Foundation (DFG) under grant Scha632/10.
Thin Film Synthesis of Ti3SiC2 by Rapid Thermal Processing of Magnetron-Sputtered TiCSi Multilayer Systems†
Article first published online: 18 OCT 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Engineering Materials
Volume 15, Issue 4, pages 269–275, April 2013
How to Cite
Hopfeld, M., Grieseler, R., Kups, T., Wilke, M. and Schaaf, P. (2013), Thin Film Synthesis of Ti3SiC2 by Rapid Thermal Processing of Magnetron-Sputtered TiCSi Multilayer Systems. Adv. Eng. Mater., 15: 269–275. doi: 10.1002/adem.201200180
- Issue published online: 8 APR 2013
- Article first published online: 18 OCT 2012
- Manuscript Accepted: 12 SEP 2012
- Manuscript Received: 16 MAY 2012
MAX phase coating could have interesting technical applications in many fields. This paper describes the synthesis of the Mn+1AXn phase Ti3SiC2 by a rapid thermal annealing process of physical vapor deposited TiCSi multilayer thin films on Si (100) and SiO2 substrates. Annealing temperatures of 800–1000 °C affected the solid state reaction of titanium, carbon and silicon creating titanium-carbides, -silicides, and Ti3SiC2. The film structures and chemical compositions were observed by grazing incidence X-ray diffraction, transmission electron microscopy, and glow discharge optical emission spectroscopy. Analysis after the rapid thermal processing revealed the formation of the polycrystalline Mn+1AXn phase Ti3SiC2 in coexistence with TiSi2, TiC and Ti5Si3, even within a 0 s annealing process. This synthesis method has a high potential for the formation of MAX phases as a high temperature electrical contact material.