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Thin Film Synthesis of Ti3SiC2 by Rapid Thermal Processing of Magnetron-Sputtered Ti[BOND]C[BOND]Si Multilayer Systems

Authors

  • Marcus Hopfeld,

    Corresponding author
    1. TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies, Chair Materials for Electronics, POB 100565, 98684 Ilmenau, Germany
    • TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies, Chair Materials for Electronics, POB 100565, 98684 Ilmenau, Germany
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  • Rolf Grieseler,

    1. TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies, Chair Materials for Electronics, POB 100565, 98684 Ilmenau, Germany
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  • Thomas Kups,

    1. TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies, Chair Materials for Electronics, POB 100565, 98684 Ilmenau, Germany
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  • Marcus Wilke,

    1. MFPA Weimar, Testing Center for Thin Films and Materials Properties at TU Ilmenau, POB 2310, 99404 Weimar, Germany
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  • Peter Schaaf

    Corresponding author
    1. TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies, Chair Materials for Electronics, POB 100565, 98684 Ilmenau, Germany
    • TU Ilmenau, Institute of Materials Engineering and Institute of Micro- and Nanotechnologies, Chair Materials for Electronics, POB 100565, 98684 Ilmenau, Germany
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  • This work was supported by the German Research Foundation (DFG) under grant Scha632/10.

Abstract

MAX phase coating could have interesting technical applications in many fields. This paper describes the synthesis of the Mn+1AXn phase Ti3SiC2 by a rapid thermal annealing process of physical vapor deposited Ti[BOND]C[BOND]Si multilayer thin films on Si (100) and SiO2 substrates. Annealing temperatures of 800–1000 °C affected the solid state reaction of titanium, carbon and silicon creating titanium-carbides, -silicides, and Ti3SiC2. The film structures and chemical compositions were observed by grazing incidence X-ray diffraction, transmission electron microscopy, and glow discharge optical emission spectroscopy. Analysis after the rapid thermal processing revealed the formation of the polycrystalline Mn+1AXn phase Ti3SiC2 in coexistence with TiSi2, TiC and Ti5Si3, even within a 0 s annealing process. This synthesis method has a high potential for the formation of MAX phases as a high temperature electrical contact material.

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