Now Assistant Professor, Materials Science and Engineering, Clemson University.
Thermal Conductivity of ZrB2SiCB4C from 25 to 2000 °C†
Version of Record online: 21 JAN 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Engineering Materials
Volume 15, Issue 6, pages 425–433, June 2013
How to Cite
Peng, F., Erdman, R., Van Laningham, G., Speyer, R. F. and Campbell, R. (2013), Thermal Conductivity of ZrB2SiCB4C from 25 to 2000 °C. Adv. Eng. Mater., 15: 425–433. doi: 10.1002/adem.201200298
This project was funded by the Air Force Office of Scientific Research, Contract FA9550-08-1-0408. The authors would like to express their appreciation for the helpful suggestions and support of their contract monitor, Dr. Ali Sayir.
- Issue online: 11 JUN 2013
- Version of Record online: 21 JAN 2013
- Manuscript Accepted: 18 DEC 2012
- Manuscript Received: 23 SEP 2012
The thermal diffusivities of ZrB2–SiC (10.7, 21.9, or 48.7 vol% SiC) with B4C sintering aid were measured over 25–2000 °C using laser flash. The composition with the highest SiC showed the highest thermal conductivity (k) at 25 °C, but the lowest above ≈400 °C, because of the greater k temperature sensitivity of the SiC phase. Finite difference calculations of k, using selected literature data for the individual phases, and the concentration of phases from microstructures, correctly predicted temperature and phase concentration dependencies, but were lower than experimental results. The k of pure ZrB2 and SiC as a function of temperature were back-calculated from the experimental results for the multi-phase materials; they were in good agreement with specific literature values.