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ZnSe-Based Longitudinal Twinning Nanowires


  • This work was supported by the National Natural Science Foundation of China under Grant No. 11174049, 61376017, 11204030, 51071044, the Fundamental Research Funds for the Central Universities, the NSFC-NRF Scientific Cooperation Program, the National Research Foundation of Korea (NRF) Grant (NRF-2012K1A2B1A03000327), the Research Funds from Ministry of Education, China, the Natural Science Foundation of Jiangsu Province (No. BK2012024), and Chinese postdoctoral funding (No. 2012M520053).


Zinc blende ZnSe longitudinal twinning nanowires and a sandwich structure with the wurtzite ZnSe inserting into the zinc blende ZnSe longitudinal twinning nanowires are fabricated via a simple thermal evaporation method. The high-resolution transmission electron microscope images of the two types of nanowires match well with simulated atomic models of them. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire. The vibrating and luminescence properties of the as-grown longitudinal twinning nanowire are investigated by room-temperature Raman and low-temperature (10 K) photoluminescence spectroscopy, respectively. The electrical transport properties of the two types of longitudinal twinning ZnSe nanowires and the monocrystal ZnSe nanowires were compared using in situ measurement in transmission electron microscope.