ZnSe-Based Longitudinal Twinning Nanowires (pages 459–465)
Jing Xu, Aijiang Lu, Chunrui Wang, Rujia Zou, Xiaoyun Liu, Xing Wu, Yuxi Wang, Sijia Li, Litao Sun, Xiaoshuang Chen, Hongseok Oh, Hyeonjun Baek, Gyu-Chul Yi and Junhao Chu
Article first published online: 20 JAN 2014 | DOI: 10.1002/adem.201300405
Two kinds of ZnSe-based longitudinal twinning nanowires are grown through a simple thermal evaporation. The growth of them might be caused by the crystal plane slip during the phase transformation process between the wurtzite and the zinc blende ZnSe nanowire.