Cleavage Fracture of Brittle Semiconductors from the Nanometre to the Centimetre Scale (pages 309–317)
K. Wasmer, C. Ballif, R. Gassilloud, C. Pouvreau, R. Rabe, J. Michler, J.-M. Breguet, J.-M. Solletti, A. Karimi and D. Schulz
Version of Record online: 31 MAY 2005 | DOI: 10.1002/adem.200500044
The fundamental phenomena occurring during the scribing and subsequent fracturing process usually performed when preparing surfaces of brittle semiconductors. Hence, it is shown how phase transformation can occur in Si under a diamond tip, how single dislocations can be induced in InP wafers and how higher load scratching of GaAs wafer leads to the apparition of a crack network below the surface. Then the cleavage experiments are described where the breaking load of thin GaAs (100) wafers is directly related to the presence of initial sharp cracks induced by scratching. It is found by finite element simulation (FEM) that the depth of the median crack below the scratch determines quantitatively the onset of crack propagation. By carefully controlling the position and measuring the force during the cleavage, it is demonstrated that crack propagation through a wafer can be controlled.