The authors greatly appreciate financial support from the Commonwealth of Kentucky, from NSF for CAREER grant (CTS 9876251), and the U. S. Air Force for a grant through AFOSR F49620-00-1-0310).
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Full Paper
Nanoweb Formation: 2D Self-Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes†
Article first published online: 1 JUL 2003
DOI: 10.1002/adfm.200304391
Copyright © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Graham, U.M., Sharma, S., Sunkara, M.K. and Davis, B.H. (2003), Nanoweb Formation: 2D Self-Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes. Adv. Funct. Mater., 13: 576–581. doi: 10.1002/adfm.200304391
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Publication History
- Issue published online: 1 JUL 2003
- Article first published online: 1 JUL 2003
- Manuscript Accepted: 30 APR 2003
- Manuscript Received: 4 APR 2003
- Abstract
- References
- Cited By
Keywords:
- Gallium oxide;
- Nanotubes, oxide;
- Nanowire networks;
- Self-assembling materials
Abstract
This paper reports a method to produce networks of crystalline gallium oxide comprised of one-dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 109 cm–2. A possible mechanism for the fast self-assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β-gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous.