This work was supported by a program of the National Research Laboratory from the Minstry of Science and Technology.
Atomic Layer Deposition of TiO2 Thin Films on Mixed Self-Assembled Monolayers Studied as a Function of Surface Free Energy†
Article first published online: 5 NOV 2003
Copyright © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 13, Issue 11, pages 873–876, November, 2003
How to Cite
Lee, J.P., Jang, Y.J. and Sung, M.M. (2003), Atomic Layer Deposition of TiO2 Thin Films on Mixed Self-Assembled Monolayers Studied as a Function of Surface Free Energy. Adv. Funct. Mater., 13: 873–876. doi: 10.1002/adfm.200304445
- Issue published online: 5 NOV 2003
- Article first published online: 5 NOV 2003
- Manuscript Accepted: 24 JUL 2003
- Manuscript Received: 25 JUN 2003
- Atomic layer deposition;
- Monolayers, self-assembled;
- Thin films, titania
Mixed self-assembled monolayers (SAMs) with different ratios of –OH to –CH3 groups were used to modify the surface free energies of the Si substrates from 64 to 29 mN m–1. The TiO2 thin films were grown on the mixed SAM-coated Si substrates by atomic layer deposition (ALD) from titanium isopropoxide and water. A two-dimensional growth mode is observed on the SAMs-coated substrates possessing high surface free energies. As the surface free energy decreases, a three-dimensional growth mode begins to dominate. These observations indicate that the mixed SAMs can control the growth modes of the atomic layer deposition by modifying of the surface free energies of the substrates.