This work was supported by the Japan Society for the Promotion of Science (JSPS) Fellowship at the National Institute for Materials Science, Tsukuba, Japan.
The First Template-Free Growth of Crystalline Silicon Microtubes †
Article first published online: 17 JUN 2004
Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 14, Issue 6, pages 610–614, June, 2004
How to Cite
Hu, J., Bando, Y., Liu, Z., Zhan, J. and Golberg, D. (2004), The First Template-Free Growth of Crystalline Silicon Microtubes . Adv. Funct. Mater., 14: 610–614. doi: 10.1002/adfm.200305138
- Issue published online: 17 JUN 2004
- Article first published online: 17 JUN 2004
- Manuscript Accepted: 14 JAN 2004
- Manuscript Received: 17 NOV 2003
- Microtubes, inorganic;
A simple template-free high-temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As-grown Si microtubes were characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and room-temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room-temperature photoluminescence measurement shows the as-synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.