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Near-Infrared Light-Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb-tris(β-Diketonate) Complexes†

  1. T.-S. Kang,
  2. B.S. Harrison,
  3. M. Bouguettaya,
  4. T.J. Foley,
  5. J.M. Boncella,
  6. K.S. Schanze,
  7. J.R. Reynolds

Article first published online: 7 MAR 2003

DOI: 10.1002/adfm.200390031

Issue

Advanced Functional Materials

Advanced Functional Materials

Volume 13, Issue 3, pages 205–210, March, 2003

Additional Information

How to Cite

Kang, T.-S., Harrison, B.S., Bouguettaya, M., Foley, T.J., Boncella, J.M., Schanze, K.S. and Reynolds, J.R. (2003), Near-Infrared Light-Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb-tris(β-Diketonate) Complexes. Adv. Funct. Mater., 13: 205–210. doi: 10.1002/adfm.200390031

Author Information

  1. Department of Chemistry and Center for Macromolecular Science and Engineering, University of Florida, Gainesville, FL 32611, USA

  1. †

    This work supported by the Defense Advanced Research Projects Agency (Grant No. DAAD 19-00-1-0002).

Publication History

  1. Issue published online: 7 MAR 2003
  2. Article first published online: 7 MAR 2003
  3. Manuscript Accepted: 3 DEC 2002
  4. Manuscript Received: 30 SEP 2002

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Keywords:

  • Electroluminescence, near-infrared;
  • Energy transfer;
  • Lanthanide complexes

Abstract

Near-infrared-emitting electroluminescent (EL) devices using blue-light-emitting polymers blended with the Yb complexes Yb(DBM)3phen (DBM = dibenzoylmethane), Yb(DNM)3phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C5H5)Co{P(O)Et2}3]–) have been studied. EL devices composed of Yb(DNM)3phen blended with PPP-OR11 showed enhanced near-IR output at 977 nm when compared to those fabricated with Yb(DBM)3phen/PPP-OR11 blends. The maximum near-IR external efficiencies of the devices with Yb(DBM)3phen and Yb(DNM)3phen are, respectively, 7 × 10–5 (at 6 V and at 0.81 mA mm–2) and 4 × 10–4 (at 7 V, and 0.74 mA mm–2). The optimal blend composition for EL device performance consisted of PPP-OR11 blended with 10–20 mol-% Yb(DNM)3phen. A device fabricated using Yb-(TPP)L(OEt)/PPP-OR11 showed significantly enhanced near-IR output efficiency, and future efforts will focus on devices fabricated using porphyrin-based materials.

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