Low-Temperature Formation of Well-Aligned Nanocrystalline Si/SiOx Composite Nanowires

Authors


  • The authors thank Dr. K. H. Chen and Prof. Y. Chen for help with Raman and absorption, and PL measurements, respectively. Financial support from the National Science Council in Taiwan under Contract No. NSC-92-2214-E006-005 is gratefully acknowledged.

Abstract

Well-aligned nanocrystalline (nc)-Si/SiOx composite nanowires have been deposited on various substrates at 120 °C using SiCl4/H2 in a hot-filament chemical vapor deposition reactor. Structural and compositional analyses reveal that silicon nanocrystals are embedded in the amorphous SiOx nanowires. The nc-Si/SiOx composite nanowires are transparent in the range 500–900 nm. Photoluminescence spectra of the nc-Si/SiOx composite nanowires have a broad emission band, ranging from 420 to 525 nm. Water vapor from the chamber wall plays a crucial role in the formation of the well-aligned nanowires. A possible mechanism for the formation of the composite nanowires is suggested.

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