The authors thank Semjon Shikin (NT-MDT, Moscow, Russia) for his help with the modulated friction force imaging and Alexander Alexeev and Dmitri Kozodaev for their valuable support and discussions. The Dutch Polymer Institute (DPI), Fundamenteel Onderzoek der Materie (FOM), NWO (VICI award), and the Fonds der Chemischen Industrie are acknowledged for their financial support.
Oxidation Conditions for Octadecyl Trichlorosilane Monolayers on Silicon: A Detailed Atomic Force Microscopy Study of the Effects of Pulse Height and Duration on the Oxidation of the Monolayer and the Underlying Si Substrate†
Article first published online: 27 MAY 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 15, Issue 6, pages 938–944, June, 2005
How to Cite
Wouters, D., Willems, R., Hoeppener, S., Flipse, C. F. J. and Schubert, U. S. (2005), Oxidation Conditions for Octadecyl Trichlorosilane Monolayers on Silicon: A Detailed Atomic Force Microscopy Study of the Effects of Pulse Height and Duration on the Oxidation of the Monolayer and the Underlying Si Substrate. Adv. Funct. Mater., 15: 938–944. doi: 10.1002/adfm.200400534
- Issue published online: 27 MAY 2005
- Article first published online: 27 MAY 2005
- Manuscript Accepted: 17 DEC 2004
- Manuscript Received: 16 NOV 2004
- Nanolithography, scanning probe;
- Self-assembled monolayers (SAMs);
In current scanning-probe nanolithography research, substrates consisting of octadecyl trichlorosilane monolayers on silicon are often used. On one hand, the presence of an organic monolayer can be used as a passive resist, influencing the formation of silicon dioxide on the substrate, whereas in other cases the monolayer itself is patterned, creating local chemical functionality. In this study we investigate the time scales involved in either process. By looking at friction and height images of lines oxidized at different bias voltages and different pulse durations, we have determined the parameter space in which the formation of silicon dioxide is dominant as well as the region in which the oxidation of the monolayer itself is dominant.