The authors thank the EPSRC for the financial support under grants GR/R88328/01 and GR/S02303/01. The authors acknowledge Avecia Ltd. of Manchester for the provision of PTAA, and the EPSRC for support under research grants GR/R88328/01 and GR/S02303/01.
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Full Paper
Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator†
Article first published online: 27 MAY 2005
DOI: 10.1002/adfm.200400570
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Majewski, L. A., Schroeder, R. and Grell, M. (2005), Low-Voltage, High-Performance Organic Field-Effect Transistors with an Ultra-Thin TiO2 Layer as Gate Insulator. Adv. Funct. Mater., 15: 1017–1022. doi: 10.1002/adfm.200400570
- †
Publication History
- Issue published online: 27 MAY 2005
- Article first published online: 27 MAY 2005
- Manuscript Accepted: 3 JAN 2005
- Manuscript Received: 7 DEC 2004
- Abstract
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Keywords:
- Dielectrics;
- Field-effect transistors, organic;
- Thin films;
- Titania
Abstract
We report on our latest improvements in organic field-effect transistors (OFETs) using ultra-thin anodized gate insulators. Anodization of titanium (Ti) is an extremely cheap and simple technique to obtain high-quality, very thin (∼ 7.5 nm), pinhole-free, and robust gate insulators for OFETs. The anodized insulators have been tested in transistors using pentacene and poly(triarylamine) (PTAA) as active layers. The fabricated devices display low-threshold, normally “off” OFETs with negligible hysteresis, good carrier mobility, high gate capacitance, and exceptionally low inverse subthreshold slope. Device performance is improved via chemical modification of TiO2 with an octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM). As the result of this combination of favorable properties, we have demonstrated OFETs that can be operated with voltages well below 1 V.