The authors gratefully acknowledge the PARC process line for assistance in sample preparation, the Xerox Research Center of Canada (B. S. Ong and Y. Wu) for providing the PQT-12 material, and Dow Chemical Company for providing the F8T2 material (M. Dibbs and D. Brennan). Furthermore, the authors would like to thank V. Arora for contact-angle measurements, and R. Apte, A. C. Arias, and J.-P. Lu for helpful discussions. This work is partially supported by the Advanced Technology Program of the National Institute of Standards and Technology (contract 70NANB0H3033).
Polymer Thin-Film Transistor Arrays Patterned by Stamping†
Article first published online: 13 APR 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 15, Issue 7, pages 1105–1110, July, 2005
How to Cite
Salleo, A., Wong, W. S., Chabinyc, M. L., Paul, K. E. and Street, R. A. (2005), Polymer Thin-Film Transistor Arrays Patterned by Stamping. Adv. Funct. Mater., 15: 1105–1110. doi: 10.1002/adfm.200400582
- Issue published online: 4 JUL 2005
- Article first published online: 13 APR 2005
- Manuscript Accepted: 14 DEC 2004
- Manuscript Received: 4 SEP 2004
- Poly(dimethyl siloxane) (PDMS);
- Thin-film transistors (TFTs)
We present a process to stamp semiconductor polymers suitable for the parallel fabrication of thin-film transistor island arrays. This process is compatible with roll-to-roll fabrication. When a chemically treated elastomeric stamp is pressed against a substrate previously coated with the polymer solution, a capillary force drives the polymer solution into the stamp recesses. Simultaneously, the raised features of the stamp in contact with the substrate absorb the solvent. The resulting polymer thin film reproduces the pattern of the raised features of the stamp. Features with lateral dimensions as small as 2 μm are faithfully reproduced. We use this stamping process to fabricate arrays of polymer thin-film transistors (TFTs) using poly(fluorene-co-bithiophene) and poly(thiophene) semiconductors.