The financial support of this work, by National Natural Science Foundation of China and the 973 Project of China, is gratefully acknowledged.
A Precursor-Based Route to ZnSe Nanowire Bundles†
Article first published online: 6 SEP 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 15, Issue 11, pages 1787–1792, November, 2005
How to Cite
Xiong, S., Shen, J., Xie, Q., Gao, Y., Tang, Q. and Qian, Y. T. (2005), A Precursor-Based Route to ZnSe Nanowire Bundles. Adv. Funct. Mater., 15: 1787–1792. doi: 10.1002/adfm.200500069
- Issue published online: 27 OCT 2005
- Article first published online: 6 SEP 2005
- Manuscript Accepted: 16 APR 2005
- Manuscript Received: 2 FEB 2005
- Nanowires, inorganic;
- Solvothermal synthesis
A large number of one-dimensional bundles of ZnSe nanowires with diameters ranging from 15–20 nm and lengths of up to tens of micrometers have been prepared via the thermal treatment of a ribbon-like precursor (ZnSe·3ethylenediamine), which has been synthesized by a mixed solvothermal route, in an argon atmosphere. The as-obtained precursor has been characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), IR spectroscopy, thermogravimetric analysis, and elemental analysis. XRD and high-resolution TEM characterization reveal that the as-synthesized ZnSe nanowires have the single-crystal hexagonal wurtzite structure with the  growth direction. The surface chemical composition of ZnSe nanowires has been studied by X-ray photoelectron spectroscopy. The cooperative action of the mixed solvents may be responsible for the formation of the morphology of the resulting products. Room-temperature photoluminescence measurements indicate the as-grown ZnSe nanostructures have a strong emission peak centered at 587 nm and two weak emission peaks centered at 435 and 462 nm. The strong emission from the ZnSe nanostructures reveals their potential as building blocks for optoelectronic devices.