Band-Edge Photoluminescence Recovery from Zinc-Blende CdSe Nanocrystals Synthesized at Room Temperature

Authors

  • R. Li,

    1. Nanomaterials Optoelectronics Laboratory, Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
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  • J. Lee,

    1. Nanomaterials Optoelectronics Laboratory, Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
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  • D. Kang,

    1. Department of Materials Science & Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
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  • Z. Luo,

    1. Nanomaterials Optoelectronics Laboratory, Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
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  • M. Aindow,

    1. Department of Materials Science & Engineering, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
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  • F. Papadimitrakopoulos

    1. Nanomaterials Optoelectronics Laboratory, Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
    2. Department of Chemistry, Institute of Materials Science, University of Connecticut, Storrs, CT 06269-3136, USA
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  • The authors thank Dr. James R. Knox and Dr. Jack Gromek for helpful discussions and assistance with XRD experiments. Financial support from the Office of Naval Research (ONR, Grant No. N00014210883) is greatly appreciated.

Abstract

Low-cost, large-scale production of highly photoluminescent semiconductor nanocrystals (NCs) is desirable for a variety of applications. In this paper we report the realization of highly photoluminescent zinc-blende CdSe nanocrystals from room-temperature water-phase synthesis, followed by low-temperature (80 ± 5 °C) chemical etching in a solution of 3-amino-1-propanol/H2O (v/v = 10/1). X-ray diffraction (XRD) and transmission electron microscopy (TEM) data indicate that these CdSe NCs exhibit a cubic, zinc-blende crystal structure. After etching, these CdSe nanocrystals show strong band-edge photoluminescence (with quantum efficiency as high as 50 %) and lack of deep-trap emissions. A high-resolution TEM investigation suggests that this etching not only removes surface irregularities, but also attacks grain boundaries. Moreover, the size distribution reduces upon progressive etching to allow photoluminescence full-width-at-half-maximum (FWHM) values as low as 30 nm.

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