Inside Front Cover
Inside Front Cover: Oxidation Conditions for Octadecyl Trichlorosilane Monolayers on Silicon: A Detailed Atomic Force Microscopy Study of the Effects of Pulse Height and Duration on the Oxidation of the Monolayer and the Underlying Si Substrate (Adv. Funct. Mater. 6/2005)
Article first published online: 27 MAY 2005
Copyright © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Functional Materials
Volume 15, Issue 6, June, 2005
How to Cite
Wouters, D., Willems, R., Hoeppener, S., Flipse, C. F. J. and Schubert, U. S. (2005), Inside Front Cover: Oxidation Conditions for Octadecyl Trichlorosilane Monolayers on Silicon: A Detailed Atomic Force Microscopy Study of the Effects of Pulse Height and Duration on the Oxidation of the Monolayer and the Underlying Si Substrate (Adv. Funct. Mater. 6/2005). Adv. Funct. Mater., 15: n/a. doi: 10.1002/adfm.200590021
- Issue published online: 27 MAY 2005
- Article first published online: 27 MAY 2005
- Cited By
- Nanolithography, scanning probe;
- Self-assembled monolayers (SAMs);
Schubert and co-workers have performed a detailed atomic force microscopy study to establish and characterize the oxidation conditions of self-assembled monolayers of octadecyl trichlorosilane on silicon substrates. The cover image illustrates different examples of surfaces that were structured with different patterning conditions, as reported on p. 938. The graph in the background depicts three observed oxidation regimes depending on applied voltage and oxidation time.
In current scanning-probe nanolithography research, substrates consisting of octadecyl trichlorosilane monolayers on silicon are often used. On one hand, the presence of an organic monolayer can be used as a passive resist, influencing the formation of silicon dioxide on the substrate, whereas in other cases the monolayer itself is patterned, creating local chemical functionality. In this study we investigate the time scales involved in either process. By looking at friction and height images of lines oxidized at different bias voltages and different pulse durations, we have determined the parameter space in which the formation of silicon dioxide is dominant as well as the region in which the oxidation of the monolayer itself is dominant.